Resta, Raffaele
 Distribuzione geografica
Continente #
EU - Europa 913
NA - Nord America 861
AS - Asia 259
Continente sconosciuto - Info sul continente non disponibili 3
AF - Africa 2
OC - Oceania 1
Totale 2.039
Nazione #
US - Stati Uniti d'America 829
SE - Svezia 188
CN - Cina 157
RU - Federazione Russa 156
IE - Irlanda 126
UA - Ucraina 105
DE - Germania 98
IT - Italia 77
TR - Turchia 62
GB - Regno Unito 61
FI - Finlandia 35
CA - Canada 32
HK - Hong Kong 26
CH - Svizzera 21
FR - Francia 21
BE - Belgio 11
LB - Libano 5
NL - Olanda 5
AT - Austria 4
EU - Europa 3
GR - Grecia 2
ID - Indonesia 2
JP - Giappone 2
UZ - Uzbekistan 2
AU - Australia 1
HR - Croazia 1
IN - India 1
MA - Marocco 1
NG - Nigeria 1
NO - Norvegia 1
RO - Romania 1
SG - Singapore 1
VN - Vietnam 1
Totale 2.039
Città #
Chandler 168
Jacksonville 136
Dublin 125
Ann Arbor 82
Wilmington 66
Izmir 62
New York 61
Ashburn 52
Nanjing 50
Saint Petersburg 42
Pisa 38
Toronto 29
Nanchang 25
Woodbridge 24
Hong Kong 23
Princeton 22
Houston 18
Ogden 14
Beijing 13
Brooklyn 13
Helsinki 13
Kunming 12
Lausanne 12
Brussels 11
Scuola 11
Falls Church 9
Jiaxing 8
Trieste 6
Jinan 5
Milan 5
Washington 5
Changsha 4
Hebei 4
Shenyang 4
Tianjin 4
Zhengzhou 4
Den Haag 3
Genoa 3
Göteborg 3
Hangzhou 3
Lanzhou 3
Ningbo 3
Paese 3
Taizhou 3
Changchun 2
Chicago 2
East Setauket 2
Edinburgh 2
Frankfurt Am Main 2
Golden 2
Guangzhou 2
Inglewood 2
Jakarta 2
Moscow 2
Orange 2
Perugia 2
Plauen 2
Ulan-ude 2
Verona 2
Arvada 1
Blacksburg 1
Boardman 1
Borås 1
Dearborn 1
Dongguan 1
Dubendorf 1
Düsseldorf 1
Fes 1
Hanoi 1
Indiana 1
Jurong West 1
Kiev 1
Montréal 1
Oslo 1
Ottawa 1
Phoenix 1
Pitesti 1
Redmond 1
Redwood City 1
Rockville 1
Rome 1
San Diego 1
San Francisco 1
San Jose 1
Santa Lucia di Piave 1
Seattle 1
Shanghai 1
Udine 1
Vue 1
Xian 1
Totale 1.265
Nome #
Ab initio calculation of the macroscopic dielectric constant in silicon 121
Band offsets engineering at semiconductor heterojunctions 113
Electronic-properties of isocalent anf hetrovalent semiconductor interfaces 108
Density-functional theory of the dielectric constant: gradient-corrected calculation for silicon 106
Engineering of Semiconductor Heterostructures by Ultrathin Control Layers 103
Piezoelectric properties of III-V semiconductors from first-principles linear-response theory 101
Dynamical-charge neutrality at a crystal surface 101
Absolute deformation potentials in semiconductors 98
Valence-band offsets at strained Si/Ge interfaces 98
Band Offsets in Lattice-Matched Heterojunctions: A Model and First-Principles Calculations for GaAs/AlAs 98
Ab initio calculation of the low-frequency Raman cross section in silicon 97
Effects of interface morphology on Schottky-barrier heights: A case study on Al/GaAs(001) 96
Nonlinear piezoelectricity in CdTe 93
Local interface composition and band discontinuities in heterovalent heterostructures 93
Piezoelectricity in III-V and II-VI semiconductors: A systematic ab-initio calculation 91
Theory of band offsets at semiconductor heterojunctions: An ab-initio linear response approach 87
Electronic structure of InP/Ga0.47In0.53As interfaces 87
Control of Ge homojunction band offsets via ultrathin Ga–As dipole layers 86
Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures 86
Structural and electronic properties of strained Si/GaAs heterostructures 86
Control of Ge homojunction band offsets via ultrathin GaAs dipole layers 78
Microscopic manipulation of homojunction band lineups 77
Totale 2.104
Categoria #
all - tutte 8.110
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.110


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019158 0 0 0 0 0 0 0 0 0 0 20 138
2019/2020279 45 24 48 0 23 4 42 25 28 7 29 4
2020/2021211 29 0 5 23 4 44 27 0 23 28 7 21
2021/2022221 30 22 1 22 42 9 13 23 7 8 16 28
2022/2023509 73 67 40 39 24 120 62 32 39 3 6 4
2023/2024243 18 4 6 2 63 87 2 12 43 6 0 0
Totale 2.104