Resta, Raffaele
Resta, Raffaele
Scuola Internazionale Superiore di Studi Avanzati
Ab initio calculation of the low-frequency Raman cross section in silicon
1986-01-01 Baroni, S.; Resta, R.
Ab initio calculation of the macroscopic dielectric constant in silicon
1986-01-01 Baroni, S.; Resta, R.
Absolute deformation potentials in semiconductors
1990-01-01 Resta, R.; Colombo, L.; Baroni, S.
Band offsets engineering at semiconductor heterojunctions
1993-01-01 Peressi, M.; Colombo, L.; Baldareschi, A.; Resta, R.; Baroni, S.
Band Offsets in Lattice-Matched Heterojunctions: A Model and First-Principles Calculations for GaAs/AlAs
1988-01-01 Baldereschi, A.; Baroni, S.; Resta, Raffaele
Control of Ge homojunction band offsets via ultrathin GaAs dipole layers
1992-01-01 Mckinley, J. T.; Hwu, Y.; Koltenbah, B. E. C.; Margaritondo, G.; Baroni, S.; Resta, R.
Control of Ge homojunction band offsets via ultrathin Ga–As dipole layers
1991-01-01 Mckinley, J. T.; Hwu, Y.; Koltenbah, B. E. C.; Margaritondo, G.; Baroni, S.; Resta, R.
Density-functional theory of the dielectric constant: gradient-corrected calculation for silicon
1994-01-01 Dal Corso, A.; Baroni, S.; Resta, R.
Dynamical-charge neutrality at a crystal surface
1998-01-01 Ruini, A.; Resta, R.; Baroni, S.
Effects of interface morphology on Schottky-barrier heights: A case study on Al/GaAs(001)
1997-01-01 Ruini, A.; Resta, R.; Baroni, S.
Electronic structure of InP/Ga0.47In0.53As interfaces
1990-01-01 Peressi, M.; Baroni, S.; Baldereschi, A.; Resta, R.
Electronic-properties of isocalent anf hetrovalent semiconductor interfaces
1989-01-01 Resta, R.; Baldereschi, A.; Baroni, S.
Engineering of Semiconductor Heterostructures by Ultrathin Control Layers
1993-01-01 Baldereschi, A.; Resta, R.; Peressi, M.; Baroni, S.; Mäder, K.
Local interface composition and band discontinuities in heterovalent heterostructures
1994-01-01 Nicolini, R.; Vanzetti, L.; Mula, G.; Bratina, G.; Sorba, L.; Franciosi, A.; Peressi, M.; Baroni, S.; Resta, R.; Baldereschi, A.; Angelo, J. E.; Gerberich, W. W.
Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures
1992-01-01 Biasiol, G.; Sorba, L.; Bratina, G.; Nicolini, R.; Franciosi, A.; Peressi, M.; Baroni, S.; Resta, R.; Baldereschi, A.
Microscopic manipulation of homojunction band lineups
1992-01-01 Marsi, M.; La Rosa, S.; Hwu, Y.; Gozzo, F.; Coluzza, C.; Baldereschi, A.; Margaritondo, G.; Mckinley, J. T.; Baroni, S.; Resta, R.
Nonlinear piezoelectricity in CdTe
1993-01-01 Dal Corso, A; Resta, R.; Baroni, S.
Piezoelectric properties of III-V semiconductors from first-principles linear-response theory
1989-01-01 De Gironcoli, S.; Baroni, S.; Resta, R.
Piezoelectricity in III-V and II-VI semiconductors: A systematic ab-initio calculation
1990-01-01 De Gironcoli, S.; Baroni, S.; Resta, R.
Structural and electronic properties of strained Si/GaAs heterostructures
1993-01-01 Peressi, M.; Colombo, L.; Resta, R.; Baroni, S.; Baldereschi, A.