We report measurements and calculations on the properties of the intermetallic compound Be5Pt. High-quality polycrystalline samples show a nearly constant temperature dependence of the electrical resistivity over a wide temperature range. On the other hand, relativistic electronic structure calculations indicate the existence of a narrow pseudogap in the density of states arising from accidental approximate Dirac cones extremely close to the Fermi level. A small true gap of order ∼3 meV is present at the Fermi level, yet the measured resistivity is nearly constant from low to room temperature. We argue that this unexpected behavior can be understood by a cancellation of the energy dependence of density of states and relaxation time due to disorder, and discuss a model for electronic transport. With applied pressure, the resistivity becomes semiconducting, consistent with theoretical calculations that show that the bandgap increases with applied pressure. We further discuss the role of Be inclusions in the samples.
Remarkable low-energy properties of the pseudogapped semimetal Be5Pt / Fanfarillo, Laura; Hamlin, J. J.; Hennig, R. G.; Hire, Ajinkya C.; Hirschfeld, P. J.; Kim, Jungsoo; Lim, Jinhyuk; Quan, Yundi; Stewart, G. R.; Xie, Stephen R.. - In: PHYSICAL REVIEW. B. - ISSN 2469-9950. - 102:15(2020), pp. 1-11. [10.1103/PhysRevB.102.155206]
Remarkable low-energy properties of the pseudogapped semimetal Be5Pt
Fanfarillo, Laura
Membro del Collaboration group
;
2020-01-01
Abstract
We report measurements and calculations on the properties of the intermetallic compound Be5Pt. High-quality polycrystalline samples show a nearly constant temperature dependence of the electrical resistivity over a wide temperature range. On the other hand, relativistic electronic structure calculations indicate the existence of a narrow pseudogap in the density of states arising from accidental approximate Dirac cones extremely close to the Fermi level. A small true gap of order ∼3 meV is present at the Fermi level, yet the measured resistivity is nearly constant from low to room temperature. We argue that this unexpected behavior can be understood by a cancellation of the energy dependence of density of states and relaxation time due to disorder, and discuss a model for electronic transport. With applied pressure, the resistivity becomes semiconducting, consistent with theoretical calculations that show that the bandgap increases with applied pressure. We further discuss the role of Be inclusions in the samples.File | Dimensione | Formato | |
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